Preparation of nanometer-scale iron dots on insulating layer
نویسندگان
چکیده
منابع مشابه
Nanometer-Scale Patterning on PMMA Resist by Force Microscopy Lithography
Nanoscale science and technology has today mainly focused on the fabrication of nano devices. In this paper, we study the use of lithography process to build the desired nanostructures directly. Nanolithography on polymethylmethacrylate (PMMA) surface is carried out by using Atomic Force Microscope (AFM) equipped with silicon tip, in contact mode. The analysis of the results shows that the ...
متن کاملImaging and magnetometry of switching in nanometer-scale iron particles
The reversal mechanisms in arrays of nanometer-scale ~,40 nm diameter! iron particles are studied by low-temperature Hall magnetometry and room-temperature magnetic force microscopy. Rotation of the net array magnetization at low temperatures ~20 K! occurs by both reversible and irreversible modes, the latter revealed by Barkhausen jumps. Spatially resolved measurements at room temperature show...
متن کاملenvironmental effects of gol-e-gohar iron ore mine on groundwater of the area
gol-e-gohar iron ore mine of sirjan in southern part of iran is a large open pit that operates below the groundwater table and during mining operation, dewatering is required to prevent operation processes from flooding. current operation is going on by digging wells in or out of the pit and pumping to prevent flooding. as a result of the former dewatering operation a vast deep cone of depressi...
Nanometer distance measurements between multicolor quantum dots.
Quantum dot dimers made of short double-stranded DNA molecules labeled with different color quantum dots at each end were imaged using multicolor stage-scanning confocal microscopy. This approach eliminates chromatic aberration and color registration issues usually encountered in other multicolor imaging techniques. We demonstrate nanometer accuracy in individual distance measurement by suppres...
متن کاملNanometer-scale studies of vertical organization and evolution of stacked self-assembled InAs/GaAs quantum dots
We have investigated the vertical organization and evolution of 1-, 5-, 10-, and 20-layer stacks of molecular beam epitaxially grown self-assembled InAs/GaAs quantum dots using high resolution and large-scale cross-sectional scanning tunneling microscopy. We report results regarding the evolution of the dot sizes and shapes, and the assembly of vertically organized columns of stacked dots. As t...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Science and Technology of Advanced Materials
سال: 2003
ISSN: 1468-6996,1878-5514
DOI: 10.1016/s1468-6996(03)00050-0